
Document Number: 38-05537 Rev. *M Page 21 of 33
I
SB3
Automatic CE power-down
current — CMOS inputs
Max V
DD
, device deselected,
V
IN
0.3 V or V
IN
> V
DDQ
0.3 V,
f = f
MAX
= 1/t
CYC
4-ns cycle,
250 MHz
–120mA
5-ns cycle,
200 MHz
–110mA
6-ns cycle,
166 MHz
–100mA
I
SB4
Automatic CE power-down
current — TTL inputs
Max V
DD
, device deselected,
V
IN
V
IH
or V
IN
V
IL
, f = 0
All speed
grades
–40mA
Electrical Characteristics (continued)
Over the Operating Range
Parameter
[17, 18]
Description Test Conditions Min Max Unit
Capacitance
Parameter
[19]
Description Test Conditions
100-pin TQFP
Max
119-ball BGA
Max
165-ball FBGA
Max
Unit
C
IN
Input capacitance T
A
= 25 °C, f = 1 MHz,
V
DD
= 2.5 V, V
DDQ
= 2.5 V
555pF
C
CLK
Clock input capacitance 5 5 5 pF
C
I/O
Input/output capacitance 5 7 7 pF
Thermal Resistance
Parameter
[19]
Description Test Conditions
100-pin TQFP
Package
119-ball BGA
Package
165-ball FBGA
Package
Unit
JA
Thermal resistance
(junction to ambient)
Test conditions follow
standard test methods and
procedures for measuring
thermal impedance, per
EIA/JESD51.
29.41 34.1 16.8 °C/W
JC
Thermal resistance
(junction to case)
6.13 14 3.0 °C/W
AC Test Loads and Waveforms
Figure 4. AC Test Loads and Waveforms
OUTPUT
R = 1667
R = 1538
5pF
INCLUDING
JIG AND
SCOPE
(a) (b)
OUTPUT
R
L
= 50
Z
0
= 50
V
T
= 1.25 V
2.5 V
ALL INPUT PULSES
V
DDQ
GND
90%
10%
90%
10%
1 ns
1 ns
(c)
2.5 V I/O Test Load
Note
19. Tested initially and after any design or process change that may affect these parameters.
Comentários a estes Manuais