
Document Number: 001-52038 Rev. *D Page 6 of 21
Figure 5. SRAM Read Cycle 2: E and G Controlled
[6]
SRAM Read Cycles #1 and #2
(V
CC
= 5.0 V ± 10%)
[9]
NO.
Symbols
Parameter
STK14C88-25 STK14C88-35 STK14C88-45
Unit
Min Max Min Max Min Max#1, #2 Alt.
1t
ELQV
t
ACS
Chip enable access time – 25 – 35 – 45 ns
2t
AVAV
[6]
,
t
ELEH
[6]
t
RC
Read cycle time 25 35 – 45 – ns
3t
AVQV
7
t
AA
Address access time – 25 – 35 – 45 ns
4t
GLQV
t
OE
Output enable to data valid – 10 – 15 – 20 ns
5t
AXQX
[7]
t
OH
Output hold after address change 5 – 5 – 5 – ns
6t
ELQX
t
LZ
Address change or chip enable to
output active
5–5–5–ns
7t
EHQZ
[8]
t
HZ
Address change or chip disable to
output inactive
–10–13–15ns
8t
GLQX
t
OLZ
Output enable to output active 0 – 0 – 0 – ns
9t
GHQZ
[8]
t
OHZ
Output disable to output inactive – 10 – 13 15 ns
10 t
ELICCH
[10]
t
PA
Chip enable to power active 0 – 0 0 – ns
11 t
EHICCL
[10]
t
PS
Chip disable to power standby – 25 35 – 45 ns
Figure 4. SRAM Read Cycle 1: Address Controlled
[6, 7]
Notes
6. W
and HSB must be high during SRAM read cycles.
7. I/O state assumes E
and G < V
IL
and W V
IH
; device is continuously selected.
8. Measured ± 200 mV from steady state output voltage.
9. V
CC
reference levels throughout this datasheet refer to V
CC
if that is where the power supply connection is made, or V
CAP
if V
CC
is connected to ground.
10. These
parameters are guaranteed but not tested.
DATA VALID
5
t
AXQX
3
t
AVQV
DQ (DATA OUT)
ADDRESS
2
t
AVAV
Not Recommended for New Designs
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