Cypress Semiconductor CY8C21234 Manual do Utilizador Página 20

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CY8C21634/CY8C21534
CY8C21434/CY8C21334/CY8C21234
Document Number: 38-12025 Rev. *Q Page 20 of 45
DC Electrical Characteristics
DC Chip-Level Specifications
Table 12 lists the guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V and -40°C
T
A
85°C, 3.0V to 3.6V and -40°C T
A
85°C, or 2.4V to 3.0V and -40°C T
A
85°C, respectively. Typical parameters apply to
5V, 3.3V, or 2.7V at 25°C and are for design guidance only.
DC General Purpose I/O Specifications
The following tables list the guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40°C T
A
85°C, 3.0V to 3.6V and -40°C T
A
85°C, or 2.4V to 3.0V and -40°C T
A
85°C, respectively. Typical parameters
apply to 5V, 3.3V, and 2.7V at 25°C and are for design guidance only.
Table 12. DC Chip-Level Specifications
Symbol Description Min Typ Max Units Notes
Vdd Supply Voltage 2.40 5.25 V See Table 21 on page 25.
I
DD
Supply Current, IMO = 24 MHz 3 4 mA Conditions are Vdd = 5.0V,
T
A
= 25
o
C, CPU = 3 MHz, 48 MHz
disabled. VC1 = 1.5 MHz,
VC2 = 93.75 kHz, VC3 = 0.366 kHz.
I
DD3
Supply Current, IMO = 6 MHz using SLIMO
Mode.
1.2 2 mA Conditions are Vdd = 3.3V,
T
A
= 25
o
C, CPU = 3 MHz, clock
doubler disabled. VC1 = 375 kHz,
VC2 = 23.4 kHz, VC3 = 0.091 kHz.
I
DD27
Supply Current, IMO = 6 MHz using SLIMO
Mode.
1.1 1.5 mA Conditions are Vdd = 2.55V,
T
A
= 25
o
C, CPU = 3 MHz, clock
doubler disabled. VC1 = 375 kHz,
VC2 = 23.4 kHz, VC3 = 0.091 kHz.
I
SB27
Sleep (Mode) Current with POR, LVD, Sleep
Timer, WDT, and internal slow oscillator active.
Mid temperature range.
2.6 4. μA Vdd = 2.55V, 0
o
C T
A
40
o
C.
I
SB
Sleep (Mode) Current with POR, LVD, Sleep
Timer, WDT, and internal slow oscillator active.
2.8 5 μA Vdd = 3.3V, -40
o
C T
A
85
o
C.
V
REF
Reference Voltage (Bandgap) 1.28 1.30 1.32 V Trimmed for appropriate Vdd.
Vdd = 3.0V to 5.25V.
V
REF27
Reference Voltage (Bandgap) 1.16 1.30 1.33 V Trimmed for appropriate Vdd. Vdd =
2.4V to 3.0V.
AGND Analog Ground V
REF
- 0.003
V
REF
V
REF
+ 0.003
V
Table 13. 5V and 3.3V DC GPIO Specifications
Symbol Description Min Typ Max Units Notes
R
PU
Pull up Resistor 4 5.6 8 kΩ
R
PD
Pull down Resistor 4 5.6 8 kΩ
V
OH
High Output Level Vdd -
1.0
V IOH = 10 mA, Vdd = 4.75 to 5.25V (8
total loads, 4 on even port pins (for
example, P0[2], P1[4]), 4 on odd port
pins (for example, P0[3], P1[5])).
V
OL
Low Output Level 0.75 V IOL = 25 mA, Vdd = 4.75 to 5.25V (8
total loads, 4 on even port pins (for
example, P0[2], P1[4]), 4 on odd port
pins (for example, P0[3], P1[5])).
V
IL
Input Low Level 0.8 V Vdd = 3.0 to 5.25.
V
IH
Input High Level 2.1 V Vdd = 3.0 to 5.25.
V
H
Input Hysteresis 60 mV
I
IL
Input Leakage (Absolute Value) 1 nA Gross tested to 1 μA.
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