CY7C1361V25
CY7C1363V25
CY7C1365V25
PRELIMINARY
19
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines only, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
DD
Relative to GND ....... –0.5V to +3.6V
DC Voltage Applied to Outputs
in High Z State
[9]
................................. –0.5V to V
DDQ
+ 0.5V
DC Input Voltage
[9]
..............................–0.5V to V
DDQ
+ 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
.
Operating Range
Range Ambient Temperature
[8]
V
DD
/V
DDQ
Com’l 0
°
C to
+
70
°
C 2.5V
±
5%
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions Min. Max. Unit
V
DD
Power Supply Voltage 2.375 2.625 V
V
DDQ
I/O Supply Voltage 2.375 2.625 V
V
OH
Output HIGH Voltage V
DD
= Min., I
OH
= –1.0 mA 2.0 V
V
OL
Output LOW Voltage V
DD
= Min., I
OL
= 1.0 mA 0.2 V
V
IH
Input HIGH Voltage 1.7 V
DD
+ 0.3V V
V
IL
Input LOW Voltage
[9]
–0.3 0.7 V
I
X
Input Load Current
except ZZ and MODE
GND < V
I
< V
DDQ
–5 5 mA
Input Current of MODE –30 30 mA
Input Current of ZZ Input = V
SS
–5 mA
Input = V
DDQ
30 mA
I
OZ
Output Leakage
Current
GND < V
I
< V
DDQ,
Output Disabled –1.0 1.0 mA
I
DD
V
DD
Operating Supply
Current
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
7.5-ns cycle, 133 MHz 350 mA
8.8-ns cycle, 113 MHz 300 mA
10-ns cycle, 100 MHz 260 mA
12.5-ns cycle, 80 MHz 210 mA
I
SB1
Automatic CS
Power-Down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
> V
IH
or V
IN
< V
IL
f = f
MAX
= 1/t
CYC
7.5-ns cycle, 133 MHz 90 mA
8.8-ns cycle, 113 MHz 80 mA
10-ns cycle, 100 MHz 70 mA
12.5-ns cycle, 80 MHz 65 mA
I
SB2
Automatic CS
Power-Down
Current—CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
< 0.3V or V
IN
> V
DDQ
– 0.3V,
f = 0
10 mA
I
SB3
Automatic CS
Power-Down
Current—CMOS Inputs
Max. V
DD
, Device Deselected, or
V
IN
< 0.3V or V
IN
> V
DDQ
– 0.3V
f = f
MAX
= 1/t
CYC
7.5-ns cycle, 133 MHz 45 mA
8.8-ns cycle, 113 MHz 40 mA
10-ns cycle, 100 MHz 35 mA
12.5-ns cycle, 80 MHz 30 mA
I
SB4
Automatic CS
Power-Down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
> V
IH
or V
IN
< V
IL
, f = 0
25 mA
Shaded areas contain advance information.
Notes:
8. T
A
is the case temperature.
9. Minimum voltage equals –2.0V for pulse durations of less than 20 ns.
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