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Consulte online ou descarregue Manual do Utilizador para não Cypress Semiconductor CY7C1365C. 256K x 36/256K x 32/512K x 18 Flowthrough SRAM [en] Manual do Utilizador

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PRELIMINARY
256K x 36/256K x 32/512K x 18 Flowthrough SRAM
CY7C1361V25
CY7C1363V25
CY7C1365V25
Cypress Semiconductor Corporation
3901 North First Street San Jose CA 95134 408-943-2600
October 23, 2000
329
Features
Supports 113-MHz bus operations
256K x 36 / 256K x 32 / 512K x 18 common I/O
Fast clock-to-output times
7.5 ns (for 117-MHz device)
8.5 ns (for 100-MHz device)
10.0 ns (for 80-MHz device)
Two-bit wrap-around counter supporting either inter-
leaved or linear burst sequences
Separate processor and controller address strobes
provide direct interface with the processor and external
cache controller
Synchronous self-timed writes
Asynchronous output enable
Single 2.5V Power supply
JEDEC-standard pinout
Available as a 100-pin TQFP or 119 BGA
“ZZ” Sleep Mode option
Functional Description
The CY7C1361V25, CY7C1365V25 and CY7C1363V25 are
2.5V, 256K x 36, 256K x 32 and 512K x 18 synchronous-
flowthrough SRAM designed to interface with high-speed mi-
croprocessors with minimal glue logic. Maximum access delay
from the clock rise is 7.5 ns (117-MHz device). A 2-bit on-chip
wraparound burst counter captures the first address in a burst
sequence and automatically increments the address for the
rest of the burst access.
The CY7C1361V25/CY7C1365V25/CY7C1363V25 supports
either the interleaved or linear burst sequences, selected by
the MODE input pin. A HIGH selects an interleaved burst se-
quence, while a LOW selects a linear burst sequence. Burst
accesses can be initiated by asserting either the Processor
Address Strobe (ADSP
) or the Controller Address Strobe
(ADSC
) at clock rise. Address advancement through the burst
sequence is controlled by the ADV input. Byte write operations
are qualified with the Byte Write Select (BW
a,b,c,d
for
CY7C1361V25/CY7C1365V25 and BW
a,b
for CY7C1363V25)
inputs. A Global Write Enable (GW) overrides all byte write
inputs and writes data to all four bytes. All writes are conducted
with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Selects (CE
1
, CE
2
, CE
3
) and an
asynchronous output enable (OE
) provide for easy bank se-
lection and output three-state control.
CLK
A
x
GW
BWE
BW
x
CE
1
CE
CE
2
OE
256Kx36/
MEMORY
ARRAY
Logic Block Diagram
DQ
x
Data-In REG.
Q
D
CE
CONTROL
and WRITE
LOGIC
3
ADV
DP
x
MODE
7C1361/65 7C1363
A
X
512Kx18
DQ
X
DP
X
BW
X
A
[17:0]
A
[18:0]
DQ
a,b,c,d
DQ
a,b,c,d
DP
a,b,c,d
DP
a,b
BW
a,b,c,d
BW
a,b
ADSP
ADSC
ZZ
Selection Guide
7C1361-133
7C1365-133
7C1363-133
7C1361-117
7C1365-117
7C1363-117
7C1361-100
7C1365-100
7C1363-100
7C1361-80
7C1365-80
7C1363-80
Maximum Access Time (ns) 6.5 7.5 8.5 10.0
Maximum Operating Current (mA) Commercial 350 300 260 210
Maximum CMOS Standby Current (mA) 10 10 10 10
Shaded areas contain advance information.
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Resumo do Conteúdo

Página 1 - CY7C1365V25

PRELIMINARY 256K x 36/256K x 32/512K x 18 Flowthrough SRAM CY7C1361V25CY7C1363V25CY7C1365V25Cypress Semiconductor Corporation• 3901 North First Street

Página 2

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY10Write Cycle Description[1, 2, 3]Function (1361/1365) GW BWE BWdBWcBWbBWaRead 11XXXXRead 101111Write Byte

Página 3

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY11IEEE 1149.1 Serial Boundary Scan (JTAG)The CY7C1361/63 incorporates a serial boundary scan TestAccess Po

Página 4

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY12SRAM and cannot preload the Input or Output buffers. TheSRAM does not implement the 1149.1 commands EXTE

Página 5

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY13TAP Controller State DiagramTEST-LOGICRESETTEST-LOGIC/IDLESELECTDR-SCANCAPTURE-DRSHIFT-DREXIT1-DRPAUSE-D

Página 6

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY14TAP Controller Block Diagram0012..293031Boundary Scan RegisterIdentification Register012...x012Instruct

Página 7

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY15TAP AC Switching Characteristics Over the Operating Range[6, 7]Parameter Description Min. Max. UnittTCYC

Página 8

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY16TAP Timing and Test Conditions(a)TDOCL=20pFZ0=50ΩGND1.25VTest ClockTest Mode SelectTCKTMSTest Data-InTDI

Página 9

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY17Identification Register DefinitionsInstruction Field Value DescriptionRevision Number(31:28)TBD Reserved

Página 10 - PRELIMINARY

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY18Boundary Scan OrderBit #Signal NameBump ID Bit #Signal NameBump ID1 TBD TBD 36 TBD TBD2 TBD TBD 37 TBD T

Página 11

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY19Maximum Ratings(Above which the useful life may be impaired. For user guide-lines only, not tested.)Stor

Página 12

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY2Pin ConfigurationsAAAAA1A0DNUDNUVSSVDDDNUAAAAAAAANC,DPbDQbDQbVDDQVSSQDQbDQbDQbDQbVSSQVDDQDQbDQbVSSNCVDDZZ

Página 13

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY20Capacitance[10]Parameter Description Test Conditions Max. UnitCIN Input Capacitance TA = 25°C, f = 1 MH

Página 14

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY21Switching Characteristics Over the Operating Range[12, 13, 14]-133 -117 -100 -80Parameter Description Mi

Página 15

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY22Timing DiagramsWrite Cycle Timing[16, 17]Notes:16. WE is the combination of BWE, BWx, and GW to define a

Página 16

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY23Read Cycle Timing[16, 18]Note:18. RDx stands for Read Data from Address X.Timing Diagrams (continued)ADS

Página 17

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY24Timing Diagrams (continued)In/OutAtAHtAS= DON’T CARE= UNDEFINEDWE is the combination of BWE, BWx, and GW

Página 18

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY25Timing Diagrams (continued)Pipeline Timing tAS= DON’T CARE= UNDEFINEDtCLZtCHZtDOHCLKADDWECE1Data In/OutA

Página 19

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY26Timing Diagrams (continued)OEThree-StateI/OstEOHZtEOVtEOLZOE Switching Waveforms

Página 20

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY27Notes:19. Device must be deselected when entering ZZ mode. See Cycle Description for all possible signal

Página 21

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY28Ordering InformationSpeed(MHz) Ordering CodePackageName Package TypeOperatingRange133 CY7C1361V25-133AC

Página 22

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY29Package Diagrams 100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A10151-85050-A

Página 23

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY3Pin Configurations (continued)2345671ABCDEFGHJKLMNPRTUVDDQNCNCNC,DPcDQcDQdDQcDQdAA AAADSP VDDQCE2ADQcVDDQ

Página 24

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY© Cypress Semiconductor Corporation, 2000. The information contained herein is subject to change without

Página 25

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY4Pin Definitions (100-Pin TQFP)Name I/O DescriptionA0A1AInput-SynchronousAddress Inputs used to select one

Página 26

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY5VSSGround Ground for the core of the device. Should be connected to ground of the system.VDDQI/O Power Su

Página 27

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY6Pin Definitions (119-Ball BGA)Name I/O DescriptionA0A1AInput-SynchronousAddress Inputs used to select one

Página 28

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY7Functional DescriptionSingle Read AccessesThis access is initiated when the following conditions are sat-

Página 29

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY8Burst SequencesThe CY7C1361V25/CY7C1365V25/CY7C1363V25 providesa two-bit wraparound counter, fed by A[1:0

Página 30 - Revision History

CY7C1361V25CY7C1363V25CY7C1365V25PRELIMINARY9ZZ Mode Electrical CharacteristicsParameter Description Test Conditions Min. Max. UnitICCZZSnooze mode st

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