Cypress Semiconductor CY8C24423A Especificações Página 14

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CY8C24223A, CY8C24423A
Document Number: 001-52469 Rev. *H Page 14 of 50
Absolute Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested.
Operating Temperature
Table 7. Absolute Maximum Ratings
Symbol Description Min Typ Max Units Notes
T
STG
Storage temperature –55 25 +100 °C Higher storage temperatures
reduce data retention time.
Recommended storage
temperature is +25 °C ± 25 °C.
Time spent in storage at a
temperature greater than 65 °C
counts toward the Flash
DR
electrical specification in Table
20 on page 26.
T
BAKETEMP
Bake temperature 125 See
package
label
C
t
BAKETIME
Bake time See
package
label
72 Hours
T
A
Ambient temperature with power applied –40 +85 °C
V
DD
Supply voltage on V
DD
relative to V
SS
–0.5 +6.0 V
V
IO
DC input voltage V
SS
– 0.5 V
DD
+ 0.5 V
V
IOZ
DC voltage applied to tristate V
SS
– 0.5 V
DD
+ 0.5 V
I
MIO
Maximum current into any port pin –25 +50 mA
ESD Electrostatic discharge voltage 2000 V Human body model ESD.
LU Latch up current 200 mA
Table 8. Operating Temperature
Symbol Description Min Typ Max Units Notes
T
A
Ambient temperature –40 +85 °C
T
J
Junction temperature –40 +100 °C The temperature rise from
ambient to junction is package
specific. See Table 33 on page 37.
The user must limit the power
consumption to comply with this
requirement.
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