Cypress Semiconductor CY7C1386F Manual do Utilizador descarregar pdf (Página 21)

CY7C1386D, CY7C1386F

CY7C1387D, CY7C1387F

Document Number: 38-05545 Rev. *H Page 21 of 36

Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the

device. User guidelines are not tested.

Storage temperature ................................ –65 °C to +150 °C

Ambient temperature

with power applied ................................... –55 °C to +125 °C

Supply voltage on V

relative to GND .......–0.5 V to +4.6 V

Supply voltage on V

DDQ

relative to GND ...... –0.5 V to +V

DC voltage applied to outputs

in tristate ...........................................–0.5 V to V

DDQ

+ 0.5 V

DC input voltage ................................. –0.5 V to V

+ 0.5 V

Current into outputs (LOW) ........................................ 20 mA

Static discharge voltage

(per MIL-STD-883, Method 3015) ..........................> 2001 V

Latch-up current .................................................... > 200 mA

Operating Range

Range

Ambient

Temperature

DDQ

Commercial 0 °C to +70 °C 3.3 V– 5% /

+10%

2.5 V – 5% to

Industrial –40 °C to +85 °C

Neutron Soft Error Immunity

Parameter Description

Test

Conditions

Typ Max* Unit

LSBU Logical

single-bit

upsets

25 °C 361 394 FIT/

LMBU Logical

multi-bit

upsets

25 °C 0 0.01 FIT/

SEL Single event

latch-up

85 °C 0 0.1 FIT/

Dev

* No LMBU or SEL events occurred during testing; this column represents a

statistical 

, 95% confidence limit calculation. For more details refer to

Application Note AN54908 “Accelerated Neutron SER Testing and Calculation

of Terrestrial Failure Rates”

Electrical Characteristics

Over the Operating Range

Parameter

[21, 22]

Description Test Conditions Min Max Unit

Power supply voltage 3.135 3.6 V

DDQ

I/O supply voltage for 3.3 V I/O 3.135 V

for 2.5 V I/O 2.375 2.625 V

Output HIGH voltage for 3.3 V I/O, I

= –4.0 mA 2.4 – V

for 2.5 V I/O, I

= –1.0 mA 2.0 – V

Output LOW voltage for 3.3 V I/O, I

= 8.0 mA – 0.4 V

for 2.5 V I/O, I

= 1.0 mA – 0.4 V

Input HIGH voltage

[21]

for 3.3 V I/O 2.0 V

+ 0.3 V V

for 2.5 V I/O 1.7 V

+ 0.3 V V

Input LOW voltage

[21]

for 3.3 V I/O –0.3 0.8 V

for 2.5 V I/O –0.3 0.7 V

Input leakage current except ZZ

and MODE

GND  V

 V

DDQ

–5 5 µA

Input current of MODE Input = V

–30 – µA

Input = V

– 5 µA

Input current of ZZ Input = V

–5 – µA

Input = V

– 30 µA

Output leakage current GND  V

 V

DDQ,

Output Disabled –5 5 µA

Notes

21. Overshoot: V

(AC) < V

+1.5 V (pulse width less than t

CYC

/2), undershoot: V

(AC) > –2 V (pulse width less than t

CYC

/2).

22. T

Power-up

: assumes a linear ramp from 0 V to V

DD(min)

within 200 ms. During this time V

< V

and V

DDQ

< V

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