Cypress Semiconductor STK16C88 Manual do Utilizador descarregar pdf (Página 49)

12.02.07

49

Simtek Confidential

SONOS Technology

+10V to +12V

-10V to -12V

Use Difference in VT (or

∆

VT) to Represent Binary Data States

Operation of a SONOS device

PROGRAM (positive voltage on gate)

•

Electrons tunnel from substrate to trapping layer

•

Electrons are trapped

→ VT increases

ERASE (negative voltage on gate)

•

Holes tunnel from substrate to trapping layer

•

Holes recombine with trapped electrons

→ VT decreases

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